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Intrinsic and Extrinsic Semiconductors

Pure silicon conducts poorly; adding dopant atoms creates n-type or p-type material with many more carriers.

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Intrinsic (pure) silicon has equal numbers of free electrons and holes, n=p=ni≈1010n = p = n_i \approx 10^{10} cm⁻³ at room temperature — very few.

Extrinsic silicon is doped:

  • n-type — add a group-V element (phosphorus, arsenic). Each dopant gives a spare electron: electrons are the majority carriers.
  • p-type — add a group-III element (boron). Each dopant creates a hole: holes are the majority carriers.

At equilibrium the mass-action law holds: n⋅p=ni2n \cdot p = n_i^2. Doping by just one part per million increases conductivity by many orders of magnitude.

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