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Schottky Diode

A metal–semiconductor junction with low forward voltage and very fast switching.

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A Schottky diode uses a metal–semiconductor junction instead of p–n. Benefits:

  • low forward voltage, about 0.15–0.45 V (less power lost),
  • almost no reverse-recovery time (majority-carrier device) — ideal for switching power supplies.

Drawbacks: higher reverse leakage (rising sharply with temperature) and generally lower reverse-voltage ratings. Common parts: 1N5819 (40 V, 1 A), BAT54 (small signal). Silicon-carbide Schottkys extend ratings to over 1 kV.

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