Power Semiconductor Devices
Diodes, thyristors, power MOSFETs, IGBTs and wide-bandgap SiC and GaN devices compared.
Intermediate
| Device | Typical voltage | Switching speed | Typical use |
|---|---|---|---|
| Thyristor (SCR) | up to ~10 kV | slow (line frequency) | HVDC, controlled rectifiers |
| Power MOSFET (Si) | < ~600 V (usually < 200 V) | very fast | SMPS, low-voltage drives |
| IGBT | 600 V – 6.5 kV | medium (≤ ~20–50 kHz) | VFDs, EV inverters, traction |
| SiC MOSFET | 650 V – 3.3 kV | fast | EV inverters, solar, fast chargers |
| GaN HEMT | ≤ ~650 V | very fast (MHz) | compact chargers, data-centre PSUs |
Losses are conduction losses ( or ) plus switching losses, which rise with frequency. Thermal design (heatsinks, thermal resistance ) is just as important as electrical design.
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