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Power Semiconductor Devices

Diodes, thyristors, power MOSFETs, IGBTs and wide-bandgap SiC and GaN devices compared.

Intermediate
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DeviceTypical voltageSwitching speedTypical use
Thyristor (SCR)up to ~10 kVslow (line frequency)HVDC, controlled rectifiers
Power MOSFET (Si)< ~600 V (usually < 200 V)very fastSMPS, low-voltage drives
IGBT600 V – 6.5 kVmedium (≤ ~20–50 kHz)VFDs, EV inverters, traction
SiC MOSFET650 V – 3.3 kVfastEV inverters, solar, fast chargers
GaN HEMT≤ ~650 Vvery fast (MHz)compact chargers, data-centre PSUs

Losses are conduction losses (I2RonI^2R_{on} or VCEIV_{CE}I) plus switching losses, which rise with frequency. Thermal design (heatsinks, thermal resistance θJA\theta_{JA}) is just as important as electrical design.

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