Avalanche vs Zener Effect
A side-by-side comparison: what causes each breakdown, at what voltages, and why their temperature coefficients have opposite signs.
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| Zener effect | Avalanche effect | |
|---|---|---|
| Physical cause | Quantum tunnelling across a thin barrier (field emission) | Impact ionisation and carrier multiplication |
| Doping | Heavy | Light to moderate |
| Depletion width | Very narrow | Wider |
| Typical breakdown voltage | Below about 5 V | Above about 7 V |
| Temperature coefficient | Negative ( falls as T rises) | Positive ( rises as T rises) |
| Knee of the I–V curve | Softer | Sharper |
| Dominant in | Low-voltage Zener diodes | Higher-voltage "Zener" diodes, rectifiers, APDs |
Why the opposite temperature coefficients?
- Zener: higher temperature → smaller band gap → tunnelling easier → lower breakdown voltage.
- Avalanche: higher temperature → more lattice vibration (phonon scattering) → carriers lose energy in collisions more often → higher field needed → higher breakdown voltage.
A practical consequence: around 5–6 V the two effects roughly cancel, so diodes of about 5.6 V have nearly zero temperature coefficient. This is why ~5.6 V Zeners (or a Zener in series with a forward-biased diode) are popular as simple stable references.
Both breakdowns are reversible: the diode is only damaged if the power overheats it.
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