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Bipolar Junction Transistor

A three-layer (NPN or PNP) device where a small base current controls a much larger collector current.

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A BJT has an emitter, base and collector. In an NPN transistor, forward-biasing the base–emitter junction (~0.7 V) lets electrons flood from the emitter through the thin base into the collector.

IC=βIBIE=IB+ICI_C = \beta I_B \qquad I_E = I_B + I_C

β\beta (or hFEh_{FE}) is typically 50–500 and varies a lot between parts, so good circuits don't depend on its exact value. More precisely, the collector current depends exponentially on VBEV_{BE}:

IC=IS eVBE/VTI_C = I_S\, e^{V_{BE}/V_T}

Common parts: BC547/2N3904 (NPN small signal), BC557/2N3906 (PNP), TIP120 (Darlington power).

Sub-topics (4)

BJT Regions of Operation

Cut-off, active, saturation and reverse-active — which junctions are biased which way.

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BJT as a Switch

Drive a load from a microcontroller pin by saturating an NPN transistor.

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BJT Biasing

Set a stable DC operating point so an amplifier works regardless of β and temperature.

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Darlington Pair

Two transistors cascaded so their current gains multiply.

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